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Low temperature electronic transport in sputter deposited a-IGZO films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
2014 (English)In: Current applied physics, ISSN 1567-1739, E-ISSN 1878-1675, Vol. 14, no 11, 1481-1485 p.Article in journal (Refereed) Published
Abstract [en]

We report on the electrical properties of a-IGZO thin films prepared by reactive sputtering. Without oxygen injection, dc resistivity measured at room temperature is rho(300K) = 1.22 x 10(-3) Omega m. The lowest resistivity rho(300K) = 4.86 x 10(-5) Omega m is obtained at a certain oxygen supply into the deposition process. Hall effect measurements of these films reveal a metallic-like behavior from mobility and carrier concentration vs. temperature in the range 15-300 K whereas films deposited without oxygen or for the highest oxygen flows behave as semiconductors. These enhanced electrical properties are connected to the oxygen vacancies and the local coordination structure around the In3+ cations.

Place, publisher, year, edition, pages
2014. Vol. 14, no 11, 1481-1485 p.
Keyword [en]
A-IGZO films, Resistivity, Mobility, Carrier concentration
National Category
Physical Sciences Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-237285DOI: 10.1016/j.cap.2014.08.024ISI: 000343693200015OAI: oai:DiVA.org:uu-237285DiVA: diva2:768369
Available from: 2014-12-03 Created: 2014-12-01 Last updated: 2017-12-05Bibliographically approved

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Martin, NicolasNyberg, TomasKapaklis, Vassilios

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