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Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study
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2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 14, 143702- p.Article in journal (Refereed) Published
Abstract [en]

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se-2 (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO = VBMCIGS -VBMdiamond = 0.3 eV +/- 0.1 eV at the CIGS/Diamond interface and 0.0 eV +/- 0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum. 

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2014. Vol. 116, no 14, 143702- p.
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Physical Sciences Engineering and Technology
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URN: urn:nbn:se:uu:diva-238570DOI: 10.1063/1.4897166ISI: 000343988000019OAI: oai:DiVA.org:uu-238570DiVA: diva2:772468
Available from: 2014-12-17 Created: 2014-12-14 Last updated: 2017-12-05Bibliographically approved

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Törndahl, TobiasFjällström, Viktor

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