Incorporation of Na in Cu(In,Ga)Se-2 Thin-Film Solar Cells: A Statistical Comparison Between Na From Soda-Lime Glass and From a Precursor Layer of NaF
2014 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 4, no 6, 1659-1664 p.Article in journal (Refereed) Published
The presence of Na in Cu(In,Ga)Se-2 layers increases the electrical performance of this type of thin- film solar cell. A detailed comparison of incorporating Na in the CIGS layer by two different methods is performed by evaluating several hundred devices fabricated under similar conditions. The firstmethod is based on the conventionally used Na diffusion from the soda-lime glass substrate, whereas the second method is based on a NaF precursor layer deposited on a Mo- coated alkali- free glass substrate. The sample where Na is introduced by using a NaF precursor layer shows an orientation weighted toward (2 0 4)/(2 2 0) and a net acceptor concentration of 3.4 x 10(16) cm(-3), while SLG shows a (1 1 2) orientation with a 2.9 x 10(16) cm(-3) acceptor concentration. Both sample types show close identical elemental depth profiles, morphology, and electrical performance.
Place, publisher, year, edition, pages
2014. Vol. 4, no 6, 1659-1664 p.
Cu(In, Ga)Se-2 (CIGS), doping, photovoltaics, sodium (Na), substrates, thin-film solar cells
Physical Sciences Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-238424DOI: 10.1109/JPHOTOV.2014.2357261ISI: 000344542900051OAI: oai:DiVA.org:uu-238424DiVA: diva2:772890