uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Reconfigurable and Wideband Receiver Components for System-on-Chip Millimetre-Wave Radiometer Front-Ends
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis presents solutions and studies related to the design of reconfigurable and wideband receiver circuits for system-on-chip (SoC) radiometer front-ends within the millimetre-wave (mm-wave) range. Whereas many of today’s mm-wave front-ends are bulky and costly due to having discrete RF components, single-chip receiver modules could potentially result in a wider use for emerging applications such as wireless communication, short range radar and passive imaging security sensors if realised with adequate performances and at a lower cost. Three main topics are considered in this thesis, monolithic integration of low-loss RF-MEMS (Dicke) switch networks and switched LNAs in MMIC/RFIC foundry processes, designs of SiGe wideband (IF) amplifier and broadband power detectors up to W-band (75-110 GHz).

Low-loss and high isolation GaAs and SiGe RF-MEMS switch networks were designed and characterised for the 30-110 GHz range. A GaAs MEMS Dicke switch network has a measured minimum loss of 1 dB and maximum isolation of 19 dB at 70-96 GHz, respectively, making it a potential candidate in Dicke switched radiometer receivers. Furthermore, single-chip 30 GHz and W-band MEMS Dicke switched LNA designs have been realised for the first time in SiGe BiCMOS and GaAs mHEMT processes, respectively.

For a targeted 94 GHz passive imaging application two different receiver topologies have been investigated based on direct-detection and direct-conversion (heterodyne) architectures. An optimised detector design fabricated in a 0.13 μm SiGe process achieves a more wideband input matching than earlier silicon W-band detectors and is competitive with reported III-V W-band detectors in terms of a higher responsivity and similar NEP.

A SiGe 2-37 GHz high-gain differential (IF) amplifier design achieves a more wideband matching and an order of magnitude higher linearity than a recent single-ended SiGe LNA. The SiGe IF amplifier was integrated on-chip with a power detector in a 5-35 GHz IF section. Their broadband properties compared with other IF amplifier/detector RFICs, make them suitable for W-band down-conversion receivers with a larger pre-detection bandwidth and improved sensitivity. The experimental results successfully demonstrate the feasibility of the SiGe 5-35 GHz IF section for high performance SoC W-band radiometers using a more wideband heterodyne receiver architecture.

 

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2015. , 94 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1220
Keyword [en]
Reconfigurable, Wideband, Receivers, Millimetre-Wave, Radiometers, System-on-Chip, Passive Imaging.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Microwave Technology
Identifiers
URN: urn:nbn:se:uu:diva-239435ISBN: 978-91-554-9145-1 (print)OAI: oai:DiVA.org:uu-239435DiVA: diva2:778829
Public defence
2015-02-27, Häggsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (English)
Opponent
Supervisors
Available from: 2015-02-06 Created: 2014-12-24 Last updated: 2015-03-09
List of papers
1. W-Band RF-MEMS Dicke Switch Networks In A GaAs MMIC Process
Open this publication in new window or tab >>W-Band RF-MEMS Dicke Switch Networks In A GaAs MMIC Process
Show others...
2013 (English)In: Microwave and optical technology letters (Print), ISSN 0895-2477, E-ISSN 1098-2760, Vol. 55, no 12, 2849-2853 p.Article in journal (Refereed) Published
Abstract [en]

A novel design of a W-band RF-microelectro-mechanical-system (RF-MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0-level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3-1.7 dB (uncapped on-wafer), 1.6-2.0 dB (uncapped chips), and 1.8-2.7 dB (0-level packaged chips) at 70-96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer-level packaged W-band low loss/DC power and high isolation/linearity RF-MEMS Dicke switch circuits made in a GaAs foundry process. 

Keyword
Dicke switch network, Gallium Arsenide, monolithic microwave integrated circuit, radio frequency microelectro-mechanical-systems
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
urn:nbn:se:uu:diva-210167 (URN)10.1002/mop.27983 (DOI)000325091400010 ()
Available from: 2013-11-04 Created: 2013-11-04 Last updated: 2017-12-06Bibliographically approved
2. A W-band RF-MEMS switched LNA in a 70 nm mHEMT Process.
Open this publication in new window or tab >>A W-band RF-MEMS switched LNA in a 70 nm mHEMT Process.
(English)Article in journal (Refereed) Submitted
Keyword
RF-MEMS, Low noise amplifier, Radiometer, MMIC, Millimeterwave
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-239249 (URN)
Available from: 2014-12-29 Created: 2014-12-19 Last updated: 2015-03-09
3. Millimeter-Wave RF-MEMS SPDT Switch Networks in a SiGe BiCMOS Process Technology
Open this publication in new window or tab >>Millimeter-Wave RF-MEMS SPDT Switch Networks in a SiGe BiCMOS Process Technology
Show others...
2012 (English)In: 2012 42nd European Microwave Conference (EuMC), 2012, 1071-1074 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.

Series
European Microwave Conference, ISSN 2325-0305
Keyword
Millimeter-wave, radio frequency microelectromechanical systems, silicon germanium, switches
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-213884 (URN)000325100700271 ()978-2-87487-026-2 (ISBN)
Conference
42nd European Microwave Conference (EuMC), OCT 28-NOV 02, 2012, Amsterdam, NETHERLANDS
Available from: 2014-01-05 Created: 2014-01-05 Last updated: 2015-03-09Bibliographically approved
4. Monolithic Integration of an RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology
Open this publication in new window or tab >>Monolithic Integration of an RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology
(English)Manuscript (preprint) (Other academic)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-239689 (URN)
Available from: 2015-01-11 Created: 2014-12-30 Last updated: 2015-03-09
5. Design and Results of W-band Power Detectors in a 130 nm SiGe BiCMOS Process Technology.
Open this publication in new window or tab >>Design and Results of W-band Power Detectors in a 130 nm SiGe BiCMOS Process Technology.
Show others...
2014 (English)In: 2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), IEEE conference proceedings, 2014, 289-292 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE conference proceedings, 2014
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-239256 (URN)000361635500074 ()978-2-87487-036-1 (ISBN)
Conference
IEEE European Microwave Integrated Circuit Conference, Rome ITALY OCT 06-07, 2014
Available from: 2014-12-29 Created: 2014-12-19 Last updated: 2016-04-22Bibliographically approved
6. A W-band Power Detector RFIC design in a 0.13 µm SiGe BiCMOS Process.
Open this publication in new window or tab >>A W-band Power Detector RFIC design in a 0.13 µm SiGe BiCMOS Process.
(English)Article in journal, Letter (Refereed) Accepted
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-239255 (URN)
Available from: 2014-12-29 Created: 2014-12-19 Last updated: 2015-03-09
7. SiGe BiCMOS high-gain and Wideband differential Intermediate Frequency Amplifier for W-band Passive Imaging Single-Chip Receivers
Open this publication in new window or tab >>SiGe BiCMOS high-gain and Wideband differential Intermediate Frequency Amplifier for W-band Passive Imaging Single-Chip Receivers
2015 (English)In: IET Microwaves, Antennas & Propagation, ISSN 1751-8725, E-ISSN 1751-8733, Vol. 9, no 6, 569-575 p.Article in journal (Refereed) Published
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
urn:nbn:se:uu:diva-239258 (URN)10.1049/iet-map.2014.0511 (DOI)000353550800009 ()
Available from: 2014-12-29 Created: 2014-12-19 Last updated: 2017-12-05Bibliographically approved
8. Broadband IF Amplifier Section in 0.13 µm SiGe Technology for SoC W-Band Direct-Conversion Radiometers
Open this publication in new window or tab >>Broadband IF Amplifier Section in 0.13 µm SiGe Technology for SoC W-Band Direct-Conversion Radiometers
(English)Manuscript (preprint) (Other academic)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-241365 (URN)
Available from: 2015-01-11 Created: 2015-01-11 Last updated: 2015-03-09

Open Access in DiVA

fulltext(4414 kB)789 downloads
File information
File name FULLTEXT01.pdfFile size 4414 kBChecksum SHA-512
fd73da5670acae0118242235514c50c4888d8b83dd6dc0e29c4cb0a4cefd55a44a1058cb668c9ecafdb8f42868c90fd785b0da06755627d1e25c95027eac24ef
Type fulltextMimetype application/pdf
Buy this publication >>

Authority records BETA

Reyaz, Shakila Bint

Search in DiVA

By author/editor
Reyaz, Shakila Bint
By organisation
Solid State Electronics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 789 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

isbn
urn-nbn

Altmetric score

isbn
urn-nbn
Total: 2449 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf