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Inelastic silicon-hydrogen collision data for non-LTE applications in stellar atmospheres
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Theoretical Astrophysics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Theoretical Astrophysics.
2014 (English)In: Astronomy and Astrophysics, ISSN 0004-6361, E-ISSN 1432-0746, Vol. 572, A103- p.Article in journal (Refereed) Published
Abstract [en]

Aims. Inelastic processes in low-energy Si + H and Si+ + H- collisions are treated for the states from the ground state up to the ionic state, in order to provide rate coefficients needed for non-LTE modeling of Si in cool stellar atmospheres. Methods. Electronic molecular structure is determined using a recently proposed model approach based on an asymptotic method in combination with available ab initio potentials. Nonadiabatic nuclear dynamics are treated by means of a combination of multichannel formulas and the branching-probability-current method, based on the Landau-Zener model for nonadiabatic transition probabilities. Results. Cross sections and rate coefficients for inelastic processes in Si + H and Si+ + H- collisions for all transitions between 26 low-lying states plus the ionic state are calculated. It is shown that the highest rate coefficient values correspond to the excitation, de-excitation, ion-pair formation, and mutual neutralization processes involving the Si(3p4p D-3), Si(3p3d F-3), Si(3p4p D-1), Si(3p3d P-3), Si(3p4p S-1), and the ionic Si+ + H- states. These processes are likely to be important in non-LTE modeling.

Place, publisher, year, edition, pages
2014. Vol. 572, A103- p.
Keyword [en]
atomic data, line: formation, stars: abundances
National Category
Astronomy, Astrophysics and Cosmology
Identifiers
URN: urn:nbn:se:uu:diva-241973DOI: 10.1051/0004-6361/201424714ISI: 000346101700006OAI: oai:DiVA.org:uu-241973DiVA: diva2:781932
Available from: 2015-01-19 Created: 2015-01-19 Last updated: 2017-12-05Bibliographically approved

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Barklem, Paul S.

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