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Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 23, 231909- p.Article in journal (Refereed) Published
Abstract [en]

Neutron and X-ray reflectometry were used to determine the layer structure and hydrogen content of thin films of amorphous silicon (a-Si:H) deposited onto crystalline silicon (Si) wafers for surface passivation in solar cells. The combination of these two reflectometry techniques is well suited for non-destructive probing of the structure of a-Si:H due to being able to probe buried interfaces and having sub-nanometer resolution. Neutron reflectometry is also unique in its ability to allow determination of density gradients of light elements such as hydrogen (H). The neutron scattering contrast between Si and H is strong, making it possible to determine the H concentration in the deposited a-Si:H. In order to correlate the surface passivation properties supplied by the a-Si:H thin films, as quantified by obtainable effective minority carrier lifetime, photoconductance measurements were also performed. It is shown that the minority carrier lifetime falls sharply when H has been desorbed from a-Si:H by annealing. (C) 2014 AIP Publishing LLC.

Place, publisher, year, edition, pages
2014. Vol. 105, no 23, 231909- p.
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Physical Sciences
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URN: urn:nbn:se:uu:diva-241969DOI: 10.1063/1.4904340ISI: 000346266000041OAI: oai:DiVA.org:uu-241969DiVA: diva2:781943
Available from: 2015-01-19 Created: 2015-01-19 Last updated: 2017-12-05Bibliographically approved

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Vorobiev, AlexeyHjörvarsson, Björgvin

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