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Model for electron-beam-induced crystallization of amorphous Me-Si-C (Me = Nb or Zr) thin films
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström.
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2014 (English)In: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 29, no 23, 2854-2862 p.Article in journal (Refereed) Published
Abstract [en]

We use transmission electron microscopy (TEM) for in situ studies of electron-beam-induced crystallization behavior in thin films of amorphous transition metal silicon carbides based on Zr (group 4 element) and Nb (group 5). Higher silicon content stabilized the amorphous structure while no effects of carbon were detected. Films with Nb start to crystallize at lower electron doses than the Zr-containing ones. During the crystallization, equiaxed MeC grains are formed in all samples with larger grains for ZrC (similar to 5 nm) compared to NbC (similar to 2 nm). The phenomenon of self-terminating crystallization at a dimension of 2-5 nm is explained by segregation of Si that is expelled from growing metal carbide grains into the surrounding amorphous phase matrix, which limits diffusion of the metal and carbon.

Place, publisher, year, edition, pages
2014. Vol. 29, no 23, 2854-2862 p.
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Chemical Sciences
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URN: urn:nbn:se:uu:diva-241961DOI: 10.1557/jmr.2014.345ISI: 000346431100010OAI: oai:DiVA.org:uu-241961DiVA: diva2:782114
Available from: 2015-01-20 Created: 2015-01-19 Last updated: 2017-12-05Bibliographically approved

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Jansson, Ulf

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