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Incorporation effects of Si in TiCx thin films
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
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2014 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 258, 392-397 p.Article in journal (Refereed) Published
Abstract [en]

Ti-Si-C thin films with varying Si content between 0 to 10 at.% were deposited by DC magnetron sputtering from elemental targets. The effects on microstructure and lattice parameters were investigated using x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy, and first-principles calculations. The results show that the growth of pure TiCx onto Al2O3(0001) substrates at a temperature of 350 degrees C yields (111) epitaxial and understoichiometric films with x similar to 0.7. For Si contents up to 4 at.%, the TiCx epitaxy is retained locally. Si starts to segregate out from the TiCx to column boundaries at concentrations between 1 and 4 at.%, and causes a transition from epitaxial to polycrystalline growth above 4 at.%. Eventually, the top part of the films form a nanocomposite of crystalline TiC grains surrounded by amorphous SiC and C for Si contents studied up to 10 at.%. The results show that Si takes the place of carbon when incorporated in the TiC lattice.

Place, publisher, year, edition, pages
2014. Vol. 258, 392-397 p.
Keyword [en]
First-principles calculations, Thin films, Ti-C, Silicon, Physical vapor deposition (PVD)
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-242402DOI: 10.1016/j.surfcoat.2014.08.064ISI: 000346895000049OAI: oai:DiVA.org:uu-242402DiVA: diva2:783466
Available from: 2015-01-26 Created: 2015-01-26 Last updated: 2017-12-05Bibliographically approved

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Jansson, Ulf

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