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A W-band power detector RFIC design in 0.13 μm SiGe BiCMOS process
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2015 (English)In: Microwave and optical technology letters (Print), ISSN 0895-2477, E-ISSN 1098-2760, Vol. 57, no 2, 414-417 p.Article in journal (Refereed) Published
Abstract [en]

This article presents the results of a wideband power detector radio frequency integrated circuit design intended for W-band passive imaging sensors. The power detector was fabricated in a 0.13 mu m SiGe BiCMOS process technology with 300 GHz/500 GHz f(T)/f(max). The experimental results show broadband RF properties such as a responsivity of 40-60 kV/W and a noise equivalent power (NEP) of 0.3-0.4 pW/Hz(1/2) at 70-95 GHz, respectively (the DC power consumption is 225 mu W). To the authors' best knowledge, the SiGe detector design reports the widest s(11) -10 dB bandwidth (s(11)-10 dB at 79-102 GHz) among silicon based W-band power detectors and is competitive with InP-based W-band detectors in terms of a higher responsivity and similar NEP.

Place, publisher, year, edition, pages
2015. Vol. 57, no 2, 414-417 p.
Keyword [en]
millimeter-wave, passive imaging, power detector, silicon, germanium
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-242371DOI: 10.1002/mop.28861ISI: 000346595600036OAI: oai:DiVA.org:uu-242371DiVA: diva2:783594
Available from: 2015-01-26 Created: 2015-01-26 Last updated: 2017-12-05Bibliographically approved

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Reyaz, Shakila BintMalmqvist, Robert

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