A W-band power detector RFIC design in 0.13 μm SiGe BiCMOS process
2015 (English)In: Microwave and optical technology letters (Print), ISSN 0895-2477, E-ISSN 1098-2760, Vol. 57, no 2, 414-417 p.Article in journal (Refereed) Published
This article presents the results of a wideband power detector radio frequency integrated circuit design intended for W-band passive imaging sensors. The power detector was fabricated in a 0.13 mu m SiGe BiCMOS process technology with 300 GHz/500 GHz f(T)/f(max). The experimental results show broadband RF properties such as a responsivity of 40-60 kV/W and a noise equivalent power (NEP) of 0.3-0.4 pW/Hz(1/2) at 70-95 GHz, respectively (the DC power consumption is 225 mu W). To the authors' best knowledge, the SiGe detector design reports the widest s(11) -10 dB bandwidth (s(11)-10 dB at 79-102 GHz) among silicon based W-band power detectors and is competitive with InP-based W-band detectors in terms of a higher responsivity and similar NEP.
Place, publisher, year, edition, pages
2015. Vol. 57, no 2, 414-417 p.
millimeter-wave, passive imaging, power detector, silicon, germanium
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-242371DOI: 10.1002/mop.28861ISI: 000346595600036OAI: oai:DiVA.org:uu-242371DiVA: diva2:783594