A New Latch-Free LIGBT on SOI
2015 (English)In: Proceedings EUROSOI-ULIS, 2015, 33-36 p.Conference paper (Refereed)
A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latchup problems. Breakdown voltage of over 200 V, on-state current density over 3 A/mm and latch-free operation is demonstrated.
Place, publisher, year, edition, pages
2015. 33-36 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-242526DOI: 10.1109/ULIS.2015.7063766OAI: oai:DiVA.org:uu-242526DiVA: diva2:783671