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Transparent Back Contacts for Superstrate (AG,CU)(IN,GA)SE2 Thin Film Solar Cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2015 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 5, no 1, 406-409 p.Article in journal (Refereed) Published
Abstract [en]

Molybdenum oxide (MoO3) and tungsten oxide (WO3) are considered as transparent back contacts for (Ag,Cu)(In,Ga)Se-2 thin film solar cells. MoO3 and WO3 films were deposited by reactive RF sputtering at room temperature in an Ar/O-2 ambient on (Ag,Cu)(In,Ga) Se-2 absorber layers with various Ga/(Ga + In) and Ag/(Ag + Cu) ratios. Determination of the valence band offsets by XPS showed that Ag-alloying of absorber layer changes the energy band alignment at the absorber-back contact interface with MoO3 and WO3 contacts. This produces a primary contact with lower valence band offset compared with Cu(In,Ga) Se-2 counterparts. The effect is less significant in films with Ga > 0.5 and Ag > 0.5 (corresponding to E-g > 1.4 eV) probably due to the different nature of ordered vacancy compounds forming near the surface phases.

Place, publisher, year, edition, pages
2015. Vol. 5, no 1, 406-409 p.
Keyword [en]
Back contact, oxide, solar cell, XPS
National Category
Environmental Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-243441DOI: 10.1109/JPHOTOV.2014.2365469ISI: 000346732700061OAI: oai:DiVA.org:uu-243441DiVA: diva2:788102
Available from: 2015-02-12 Created: 2015-02-09 Last updated: 2017-12-04Bibliographically approved

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Larsen, J. K.

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