uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Atomic structure of defective graphene under Ga ion irradiation at low and high doses
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences. (Electron microscopy and Nanoengineering)ORCID iD: 0000-0003-1050-8441
(Institut de Sciences des Matériaux de Mulhouse)
(Institut de Sciences des Matériaux de Mulhouse)
(Institut de Sciences des Matériaux de Mulhouse)
Show others and affiliations
2014 (English)In: Atomic structure of defective graphene under Ga ion irradiation at low and high doses, 2014Conference paper, Poster (with or without abstract) (Other academic) [Artistic work]
Place, publisher, year, edition, pages
2014.
National Category
Physical Sciences Materials Engineering
Identifiers
URN: urn:nbn:se:uu:diva-244692OAI: oai:DiVA.org:uu-244692DiVA, id: diva2:789654
Conference
Graphene week 2014, Gothenburg, June 23-27, 2014
Available from: 2015-02-19 Created: 2015-02-19 Last updated: 2015-11-11

Open Access in DiVA

No full text in DiVA

Authority records BETA

Li, HuLeifer, Klaus

Search in DiVA

By author/editor
Li, HuLeifer, Klaus
By organisation
Applied Materials Sciences
Physical SciencesMaterials Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 775 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf