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Resistance noise at the metal-insulator transition in thermochromic VO2 films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.ORCID iD: 0000-0002-8279-5163
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 2, 1-7 p., 025303Article in journal (Refereed) Published
Abstract [en]

Thermochromic VO2 films were prepared by reactive DC magnetron sputtering onto heated sapphire substrates and were used to make 100-nm-thick samples that were 10 lm wide and 100 lm long. The resistance of these samples changed by a factor similar to 2000 in the 50<T-s<70 degrees C range of temperature T-s around the "critical" temperature T-c between a low-temperature semiconducting phase and a high-temperature metallic-like phase of VO2. Power density spectra S(f) were extracted for resistance noise around T-c and demonstrated unambiguous 1/f behavior. Data on S(10 Hz)/R-s(2) scaled as R-s(x), where R-s is sample resistance; the noise exponent x was -2.6 for T-s< T-c and +2.6 for T-s>T-c. These exponents can be reconciled with the Pennetta-Trefan-Reggiani theory [Pennetta et al., Phys. Rev. Lett. 85, 5238 (2000)] for lattice percolation with switching disorder ensuing from random defect generation and healing in steady state. Our work hence highlights the dynamic features of the percolating semiconducting and metallic-like regions around T-c in thermochromic VO2 films. (C) 2015 AIP Publishing LLC.

Place, publisher, year, edition, pages
2015. Vol. 117, no 2, 1-7 p., 025303
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Other Physics Topics Engineering and Technology
Research subject
Engineering Science with specialization in Solid State Physics
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URN: urn:nbn:se:uu:diva-245367DOI: 10.1063/1.4905739ISI: 000348129300064OAI: oai:DiVA.org:uu-245367DiVA: diva2:791169
Available from: 2015-02-26 Created: 2015-02-26 Last updated: 2017-12-04Bibliographically approved

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Topalian, ZarehLi, Shu-YiNiklasson, Gunnar A.Granqvist, Claes Göran

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