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Thick Double-Biased IrMn/NiFe/IrMn Planar Hall Effect Bridge Sensors
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
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2014 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 50, no 11, 4006104Article in journal (Refereed) Published
Abstract [en]

In this paper, we present a new material stack for planar Hall effect bridge (PHEB) sensors and a detailed investigation of the sensitivity and noise properties of PHEB sensors made from these. The sputter deposited material stack was based on a ferromagnetic (FM) NiFe sensing layer surrounded by two layers of anti-FM IrMn. This material stack enables implementation of a thick NiFe layer without loss of sensitivity. We present an improvement in detectivity in the PHEB by changing the shape and the materials of the corners between the sensors in a meander shape. A significant reduction of noise also comes from the thick NiFe layer, due to the reduced resistance of the sensor.

Place, publisher, year, edition, pages
2014. Vol. 50, no 11, 4006104
Keyword [en]
Anisotropic magnetoresistance (AMR), antiferromagnetic (AFM), ferromagnetic (FM), magnetic anisotropy, magnetic sensor planar Hall effect
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URN: urn:nbn:se:uu:diva-247458DOI: 10.1109/TMAG.2014.2330846ISI: 000349465900253OAI: oai:DiVA.org:uu-247458DiVA: diva2:796330
Available from: 2015-03-18 Created: 2015-03-18 Last updated: 2017-12-04Bibliographically approved

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Persson, Anders

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