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High mobility epitaxial graphene devices via aqueous-ozone processing
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - BMC, Physical Organic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - BMC, Physical Organic Chemistry.
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2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 6, article id 063503Article in journal (Refereed) Published
Abstract [en]

We find that monolayer epitaxial graphene devices exposed to aggressive aqueous-ozone processing and annealing became cleaner from post-fabrication organic resist residuals and, significantly, maintain their high carrier mobility. Additionally, we observe a decrease in carrier density from inherent strong n-type doping to extremely low p-type doping after processing. This transition is explained to be a consequence of the cleaning effect of aqueous-ozone processing and annealing, since the observed removal of resist residuals from SiC/G enables the exposure of the bare graphene to dopants present in ambient conditions. The resulting combination of charge neutrality, high mobility, large area clean surfaces, and susceptibility to environmental species suggest this processed graphene system as an ideal candidate for gas sensing applications. (C) 2015 AIP Publishing LLC.

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2015. Vol. 106, no 6, article id 063503
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URN: urn:nbn:se:uu:diva-248460DOI: 10.1063/1.4907947ISI: 000349845300075OAI: oai:DiVA.org:uu-248460DiVA, id: diva2:799783
Available from: 2015-03-31 Created: 2015-03-30 Last updated: 2017-12-04Bibliographically approved

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