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Characterization of high-k dielectrics using MeV elastic scattering of He ions
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
2015 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 347, 52-57 p.Article in journal (Refereed) Published
Abstract [en]

We present a systematic comparison of two distinct ion-beam based methods for composition analysis of nanometer oxide films: ion-beam channeling and elastic scattering using nuclear resonances, both at MeV energies. Thin films of the technologically highly relevant high-k dielectrics HfO2 and HfAIO are characterized in the present study, with the additional aim of obtaining a better quantification of the Al content for the latter system. We show that both employed ion scattering methods enable a quantitative determination of the oxygen concentrations with typical uncertainties of about 5-10% in the oxygen fraction. The influence of various kinds of systematic inaccuracies in the evaluation procedure are discussed. 

Place, publisher, year, edition, pages
2015. Vol. 347, 52-57 p.
Keyword [en]
RBS, Channeling, EBS, Thin films, High-k dielectrics
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URN: urn:nbn:se:uu:diva-251422DOI: 10.1016/j.nimb.2014.12.080ISI: 000350840200008OAI: oai:DiVA.org:uu-251422DiVA: diva2:807412
Available from: 2015-04-23 Created: 2015-04-17 Last updated: 2017-12-04Bibliographically approved

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Primetzhofer, Daniel

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