Depth Profiling Charge Accumulation from a Ferroelectric into a Doped Mott Insulator
2015 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 15, no 4, 2533-2541 p.Article in journal (Refereed) Published
The electric field control of functional properties is a crucial goal in oxide-based electronics. Nonvolatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here, we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.
Place, publisher, year, edition, pages
2015. Vol. 15, no 4, 2533-2541 p.
Aberration-corrected, STEM-EELS, Mott insulator, ferroelectricity, interface charge accumulation, interface physics, HAXPES
IdentifiersURN: urn:nbn:se:uu:diva-252705DOI: 10.1021/acs.nanolett.5b00104ISI: 000352750200048PubMedID: 25768912OAI: oai:DiVA.org:uu-252705DiVA: diva2:812367
FunderEU, European Research Council, 312483