Inversion in Metal–Oxide–Semiconductor Capacitors on Boron-Doped Diamond
2015 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 36, no 6, 603-605 p.Article in journal (Refereed) Published
For the advancement of diamond-based electronic devices, the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial, as this device finds applications in numerous fields of power electronics and high-frequency systems. The MOS capacitor forms the basic building block of the MOSFET. In this letter, we describe planar MOS capacitor structures fabricated with atomic layer deposited aluminum oxide as the dielectric on oxygen-terminated boron-doped diamond substrates with different doping levels. Using capacitance-voltage measurements, we have, for the first time, observed inversion behavior in MOS structures on boron-doped diamond, with a doping concentration of 4.1 × 1019/cm3.
Place, publisher, year, edition, pages
2015. Vol. 36, no 6, 603-605 p.
Engineering and Technology
Research subject Engineering Science with specialization in Electronics; Engineering Science with specialization in Science of Electricity
IdentifiersURN: urn:nbn:se:uu:diva-253954DOI: 10.1109/LED.2015.2423971ISI: 000355252300025OAI: oai:DiVA.org:uu-253954DiVA: diva2:816774