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Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2015 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, no 2, 021518Article in journal (Refereed) Published
Abstract [en]

Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 degrees C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an x-scan full width at half maximum value of 5.1 degrees was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

Place, publisher, year, edition, pages
2015. Vol. 33, no 2, 021518
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-257046DOI: 10.1116/1.4907874ISI: 000355739500055OAI: oai:DiVA.org:uu-257046DiVA: diva2:828068
Available from: 2015-06-29 Created: 2015-06-29 Last updated: 2017-12-04Bibliographically approved

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Moreira, Milena A.Törndahl, TobiasKatardjiev, IliaKubart, Tomas

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