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In-situ etch rate study of HfxLayOz in Cl-2/BCl3 plasmas using the quartz crystal microbalance
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2015 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, no 3, 031305Article in journal (Refereed) Published
Abstract [en]

The etch rate of HfxLayOz films in Cl-2/BCl3 plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of HfxLayOz films was higher in Cl-2 than in BCl3. In the etching of Hf0.25La0.12O0.63, Hf appeared to be preferentially removed in Cl-2 plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl3 generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf0.25La0.12O0.63 than that of La2O3.

Place, publisher, year, edition, pages
2015. Vol. 33, no 3, 031305
National Category
Materials Engineering
URN: urn:nbn:se:uu:diva-257038DOI: 10.1116/1.4914132ISI: 000355741800009OAI: oai:DiVA.org:uu-257038DiVA: diva2:828125
Available from: 2015-06-29 Created: 2015-06-29 Last updated: 2015-06-29Bibliographically approved

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Blom, Hans-Olof
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Solid State Electronics
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