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Evolution of CuI/Graphene/Ni(111) System during Vacuum Annealing
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and condensed matter physics.
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2015 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 119, no 22, 12434-12444 p.Article in journal (Refereed) Published
Abstract [en]

We present a combined core-level spectroscopy and low-energy electron diffraction study of the evolution of thin CuI layers on graphene/Ni(111) during annealing. It has been found that the annealing of the CuI/graphene/Ni(111) system up to 160 degrees C results in the formation of an ordered CuI overlayer with a (root 3 x root 3) R30 degrees structure on top of the graphene surface. At annealing temperatures of about 180 degrees C or higher, the CuI overlayer decomposes with a simultaneous intercalation of Cu and I atoms underneath the graphene monolayer on Ni(111). Nearly complete intercalation of graphene by Cu and I atoms can be achieved by deposition of about 20 angstrom of CuI, followed by annealing at 200 degrees C. The intercalated graphene layer is p-doped due to interfacial iodine atoms.

Place, publisher, year, edition, pages
2015. Vol. 119, no 22, 12434-12444 p.
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Physical Sciences Chemical Sciences
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URN: urn:nbn:se:uu:diva-257657DOI: 10.1021/acs.jpcc.5b02390ISI: 000355891600035OAI: oai:DiVA.org:uu-257657DiVA: diva2:840283
Available from: 2015-07-07 Created: 2015-07-06 Last updated: 2017-12-04Bibliographically approved

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Simonov, Konstantin A.Mårtensson, Nils

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