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Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes II: comparison with computer calculations
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1976 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 19, 645- p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1976. Vol. 19, 645- p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-257792OAI: oai:DiVA.org:uu-257792DiVA: diva2:840536
Available from: 2015-07-08 Created: 2015-07-08 Last updated: 2017-12-04

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CiteExportLink to record
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