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Oxygen content and depth profiling in silicon surface technology studied by the 16 0(aa)160 resonance at 3.015 MeV
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1978 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. 18, 410- p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1978. Vol. 18, 410- p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-257821OAI: oai:DiVA.org:uu-257821DiVA: diva2:840667
Available from: 2015-07-09 Created: 2015-07-09 Last updated: 2017-12-04

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