uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Barrier height of Re and Os contacts to n-silicon
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1980 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 36, no 4, 313- p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1980. Vol. 36, no 4, 313- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-257850OAI: oai:DiVA.org:uu-257850DiVA: diva2:840711
Available from: 2015-07-09 Created: 2015-07-09 Last updated: 2017-12-04

Open Access in DiVA

No full text

By organisation
Solid State Electronics
In the same journal
Applied Physics Letters
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 667 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf