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Comparison of annealing and iion implantation effects during solid state disilicide formation
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1982 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 53, 3067- p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1982. Vol. 53, 3067- p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-257953OAI: oai:DiVA.org:uu-257953DiVA: diva2:840890
Available from: 2015-07-09 Created: 2015-07-09 Last updated: 2017-12-04

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