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An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi1 gate
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1989 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 32, no 11, 993-996 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1989. Vol. 32, no 11, 993-996 p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-258371OAI: oai:DiVA.org:uu-258371DiVA: diva2:841446
Available from: 2015-07-13 Created: 2015-07-13 Last updated: 2017-12-04

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