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Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors
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1990 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 67, no 4, p. 2148-2152Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1990. Vol. 67, no 4, p. 2148-2152
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-258395OAI: oai:DiVA.org:uu-258395DiVA, id: diva2:841481
Available from: 2015-07-13 Created: 2015-07-13 Last updated: 2017-12-04

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