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A novel technique for the simulataneous measurement of ambipolar carrier lifetime and diffusion coefficient in silicon
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1992 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 35, no 9, 1223-1227 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1992. Vol. 35, no 9, 1223-1227 p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-258688OAI: oai:DiVA.org:uu-258688DiVA: diva2:842263
Available from: 2015-07-17 Created: 2015-07-17 Last updated: 2017-12-04

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