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Investigation of buried etch stop layer in silicon by nitrogen implantation
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1992 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 139, no 2, 561-566 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1992. Vol. 139, no 2, 561-566 p.
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-258691OAI: oai:DiVA.org:uu-258691DiVA: diva2:842266
Available from: 2015-07-17 Created: 2015-07-17 Last updated: 2015-07-17

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