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Quantum mechanical approach for the examination of the properties of MOS inversion layers in p-type silicon
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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1992 (English)Conference paper (Refereed)
Place, publisher, year, edition, pages
1992. 187-190 p.
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-258694OAI: oai:DiVA.org:uu-258694DiVA: diva2:842269
5th Nordic semiconductor meeting, Hämeenlinna, Finland
Available from: 2015-07-17 Created: 2015-07-17 Last updated: 2015-07-17

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