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The ambipolar diffusion coefficient in silicon: Dependence on excess-carrier concentration and temperature
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1994 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 76, no 5, p. 2855-2859Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1994. Vol. 76, no 5, p. 2855-2859
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-258697OAI: oai:DiVA.org:uu-258697DiVA, id: diva2:842273
Available from: 2015-07-17 Created: 2015-07-17 Last updated: 2017-12-04

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