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Low-frequency noise and Coulomb scattering in Si0.8 Ge0.2 surface channel pMOSFET's with ALD Al2O3 gate dielectrics
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2005 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 49, 907-914 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2005. Vol. 49, 907-914 p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-258887OAI: oai:DiVA.org:uu-258887DiVA: diva2:842583
Available from: 2015-07-21 Created: 2015-07-21 Last updated: 2017-12-04

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