A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
2016 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 115, 179-184 p.Article in journal (Refereed) Published
A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. The new LIGBT has the unique property of independent scaling of the input control device, i.e. LDMOS, and the output part of the device, i.e. the p-n-p part. This allows for additional freedom in designing and optimizing the device properties. Breakdown voltage of over 200 V, on-state current density over 3 A/mm, specific on-resistance below 190 mWmm2, and latch-free operation is demonstrated.
Place, publisher, year, edition, pages
2016. Vol. 115, 179-184 p.
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-259478DOI: 10.1016/j.sse.2015.08.011ISI: 000365614500017OAI: oai:DiVA.org:uu-259478DiVA: diva2:844324