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A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Comheat Microwave AB.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Comheat Microwave AB.
2016 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 115, 179-184 p.Article in journal (Refereed) Published
Abstract [en]

A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. The new LIGBT has the unique property of independent scaling of the input control device, i.e. LDMOS, and the output part of the device, i.e. the p-n-p part. This allows for additional freedom in designing and optimizing the device properties. Breakdown voltage of over 200 V, on-state current density over 3 A/mm, specific on-resistance below 190 mWmm2, and latch-free operation is demonstrated.

Place, publisher, year, edition, pages
2016. Vol. 115, 179-184 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-259478DOI: 10.1016/j.sse.2015.08.011ISI: 000365614500017OAI: oai:DiVA.org:uu-259478DiVA: diva2:844324
Funder
VINNOVA
Available from: 2015-08-05 Created: 2015-08-05 Last updated: 2017-12-04Bibliographically approved

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Olsson, JörgenVestling, LarsEklund, Klas-Håkan

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