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Semi-isotropic surface etching of diamond using a Faraday cage
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
Global Innovat Ctr, Element Six Ltd, Didcot OX11 0QR, Oxon, England.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
2015 (English)In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 58, 185-189 p.Article in journal (Refereed) Published
Abstract [en]

Etching of diamond is one of the most important process steps to realize diamond based devices. Isotropic etching in diamond yielding a high etch rate is challenging owing to its material properties. In the current study, single-crystalline diamond is etched using a Faraday cage that acts as the mask to attain semi-isotropic etching. An oxygen/chlorine plasma discharge with a pressure of 10 mTorr is used. The etching process is optimized by varying the applied plasma power, and the substrate bias together with varying parameters such as the thickness of the mask, the mask-to-diamond surface distance and the diameter of the holes in the mask. After optimization, semi-isotropic etched surface profiles up to a depth of 5 μm with an etch rate of 80 nm/min and surface roughness close to that of the unetched surface are achieved.

Place, publisher, year, edition, pages
2015. Vol. 58, 185-189 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-259787DOI: 10.1016/j.diamond.2015.07.011.ISI: 000362137100027OAI: oai:DiVA.org:uu-259787DiVA: diva2:845455
Available from: 2015-08-11 Created: 2015-08-11 Last updated: 2017-12-04Bibliographically approved

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Publisher's full texthttp://www.sciencedirect.com/science/article/pii/S0925963515300133

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Kovi, Kiran KumarIsberg, Jan

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