Potential gain in photocurrent generation for Cu(In,Ga)Se2 solar cells by using In2O3 as a transparent conductive oxide layer
2016 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 24, no 1, 102-107 p.Article in journal (Refereed) Published
This study highlights the potential of atomic layer deposited In2O3 as a highly transparent and conductive oxide (TCO)layer in Cu(In,Ga)Se2 (CIGSe) solar cells. It is shown that the efficiency of solar cells which use Zn-Sn-O (ZTO) as an alternativebuffer layer can be increased by employing In2O3 as a TCO because of a reduction of the parasitic absorption inthe window layer structure, resulting in 1.7 mA/cm2 gain in short circuit current density (Jsc). In contrast, a degradation ofdevice properties is observed if the In2O3 TCO is combined with the conventional CdS buffer layer. The estimated improvementfor large-scale modules is discussed.
Place, publisher, year, edition, pages
2016. Vol. 24, no 1, 102-107 p.
In2O3; ALD; Zn-Sn-O; alternative window layer; CIGSe; TCO
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-260877DOI: 10.1002/pip.2655ISI: 000370320100011OAI: oai:DiVA.org:uu-260877DiVA: diva2:848645
FunderSwedish Energy AgencyVINNOVA