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Two-Dimensional Indium Selenides Compounds: An Ab Initio Study
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.
2015 (English)In: Journal of Physical Chemistry Letters, ISSN 1948-7185, E-ISSN 1948-7185, Vol. 6, no 15, 3098-3103 p.Article in journal (Refereed) Published
Abstract [en]

We use first-principle calculations to investigate the electronic structure of InSe and In2Se3. The interlayer binding energy is found to be in the same range as for other 2D systems, and the monolayers are found to be dynamically stable, which suggest the possibility to obtain them as isolated layers. The GW approximation including spin-orbit is used to obtain the bandgaps, which are in the range relevant for application in electronics. Also, it is shown that an electric field perpendicular to the layers can induce a semiconductor to metal transition in this family of compounds.

Place, publisher, year, edition, pages
2015. Vol. 6, no 15, 3098-3103 p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-261963DOI: 10.1021/acs.jpclett.5b01356ISI: 000359333100041PubMedID: 26267208OAI: oai:DiVA.org:uu-261963DiVA: diva2:853683
Funder
EU, European Research Council, 247062Swedish Research CouncilKnut and Alice Wallenberg Foundation
Available from: 2015-09-14 Created: 2015-09-07 Last updated: 2017-12-04Bibliographically approved

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Eriksson, Olle

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