Two-Dimensional Indium Selenides Compounds: An Ab Initio Study
2015 (English)In: Journal of Physical Chemistry Letters, ISSN 1948-7185, E-ISSN 1948-7185, Vol. 6, no 15, 3098-3103 p.Article in journal (Refereed) Published
We use first-principle calculations to investigate the electronic structure of InSe and In2Se3. The interlayer binding energy is found to be in the same range as for other 2D systems, and the monolayers are found to be dynamically stable, which suggest the possibility to obtain them as isolated layers. The GW approximation including spin-orbit is used to obtain the bandgaps, which are in the range relevant for application in electronics. Also, it is shown that an electric field perpendicular to the layers can induce a semiconductor to metal transition in this family of compounds.
Place, publisher, year, edition, pages
2015. Vol. 6, no 15, 3098-3103 p.
IdentifiersURN: urn:nbn:se:uu:diva-261963DOI: 10.1021/acs.jpclett.5b01356ISI: 000359333100041PubMedID: 26267208OAI: oai:DiVA.org:uu-261963DiVA: diva2:853683
FunderEU, European Research Council, 247062Swedish Research CouncilKnut and Alice Wallenberg Foundation