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Fabrication of highly sensitive and selective H2 gas sensor based on SnO2 thin film sensitized with microsized Pd islands
Hanoi University of Science and Technology. (ITIMS)
Hanoi University of Science and Technology. (ITIMS)
Hanoi University of Science and Technology. (ITIMS)
Hanoi University of Science and Technology. (ITIMS)
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2016 (English)In: Journal of Hazardous Materials, ISSN 0304-3894, E-ISSN 1873-3336, Vol. 301, 433-442 p.Article in journal (Refereed) Published
Abstract [en]

Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H2 sensing devices by adopting a simple design of planar–type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO2 thin film–based sensors that were sensitized with microsized Pd islands were fabricated at a wafer–scale by using a sputtering system combined with micro–electronic techniques. The thicknesses of SnO2 thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25–250 ppm, with a linear dependence to H2 concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H2 among other gases, such as CO, NH3, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms.

Place, publisher, year, edition, pages
2016. Vol. 301, 433-442 p.
Keyword [en]
H2 gas sensor; Sputtering; SnO2; Pd islands; wafer–scale fabrication
National Category
Natural Sciences Nano Technology
Research subject
Engineering Science with specialization in Microsystems Technology; Engineering Science with specialization in Materials Science; Engineering Science with specialization in Nanotechnology and Functional Materials
Identifiers
URN: urn:nbn:se:uu:diva-265279DOI: 10.1016/j.jhazmat.2015.09.013ISI: 000367407200047OAI: oai:DiVA.org:uu-265279DiVA: diva2:864327
Available from: 2015-10-26 Created: 2015-10-26 Last updated: 2017-12-01Bibliographically approved

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Nguyen, Hugo

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