Slow recombination in quantum dot solid solar cellusing p–i–n architecture with organic p-type holetransport material
2015 (English)In: Journal of Materials Chemistry A, ISSN 2050-7488, Vol. 3, no 41, 20579-20585 p.Article in journal (Refereed) Published
The interfaces between different materials in the heterojunction colloidal quantum dot (QD) solar cell playan important role for charge carrier separation, recombination and collection. Here, an organic–inorganichybrid p–i–n architecture for the heterojunction PbS QD solid solar cell is constructed to increase thecharge extraction and reduce charge recombination. Heavily doped poly(3-hexylthiophene-2,5-diyl)(P3HT) is applied as hole transport interlayer between the QD film and metal contact electrode. Theresults show that the P3HT interlayer diminishes the charge carrier recombination at the QD film/metalcontact electrode interface leading to increased open-circuit voltage and increased electron life time.Furthermore, after incorporation of P3HT interlayer an additional p–i heterojunction might form atP3HT/QD film interface resulting in increased depletion region, which promotes charge carrierextraction under working conditions. Two other organic p-type interlayers are also investigated,however, the results indicate that a barrier for charge extraction is formed for these devices, which isexplained by the difference in energy levels. The solar cell with the P3HT interlayer exhibits a powerconversion efficiency of 5.1% at 1 sun of illumination and ambient atmosphere, which is 20% highercompared to the solar cell without any hole transport interlayer.
Place, publisher, year, edition, pages
2015. Vol. 3, no 41, 20579-20585 p.
IdentifiersURN: urn:nbn:se:uu:diva-265496DOI: 10.1039/c5ta07111aISI: 000363145500019OAI: oai:DiVA.org:uu-265496DiVA: diva2:865954
FunderGöran Gustafsson Foundation for promotion of scientific research at Uppala University and Royal Institute of TechnologySwedish Energy AgencySwedish Research Council FormasSwedish Research Council