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Study on the thermal stability of Al/NbTiSiN/NbTiSiON/SiO2 solar selective absorbing coating
Beihang Univ, Ctr Condensed Matter & Mat Phys, Beijing 100191, Peoples R China..
Beihang Univ, Ctr Condensed Matter & Mat Phys, Beijing 100191, Peoples R China..
Beihang Univ, Ctr Condensed Matter & Mat Phys, Beijing 100191, Peoples R China..
Beihang Univ, Ctr Condensed Matter & Mat Phys, Beijing 100191, Peoples R China..
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2015 (English)In: Solar Energy, ISSN 0038-092X, E-ISSN 1471-1257, Vol. 119, 18-28 p.Article in journal (Refereed) Published
Abstract [en]

In this work, the NbTiSiN and NbTiSiON layers are used instead of NbTiN and NbTiON layers to further improve the thermal stability of Al/NbTiN/NbTiON/SiO2 multilayer solar selective absorbing coating. The thermal stability of Si-doped individual layers and multilayer coatings are investigated. The X-ray diffraction (XRD) results show that Si incorporation into NbTiN (NbTiSiN) layer does not change its preferred orientation, and the Si-doped NbTiON (NbTiSiON) layer remains in amorphous phase. On the other hand, by introducing Si into NbTiN and NbTiON layers induce significant improvement of the oxidation resistance at 500 degrees C in air. After ageing in air at 500 degrees C for 2 h, the absorptance and emittance (at 400 degrees C) of Al/NbTiN/NbTiON/SiO2 and Al/NbTiSiN/NbTiSiON/SiO2 multilayer coatings change from 0.934/0.13 and 0.931/0.12 to 0.538/0.14 and 0.922/0.13, respectively. Meanwhile the surface roughness increases from 18.3 and 7.9 to 41.5 and 14.7 respectively, as atomic force microscopy (AFM) shows. The Al/NbTiSiN/NbTiSiON/SiO2 coating still has a high absorptance (0.910) and low emittance (0.13, at 400 degrees C) after ageing at 550 degrees C in vacuum for 100 h. It displays that Si-doping play an important role in the improvement of the thermal stability.

Place, publisher, year, edition, pages
2015. Vol. 119, 18-28 p.
Keyword [en]
Solar selective absorbing coating, Magnetron sputtering, Si doping, Thermal stability
National Category
Environmental Engineering
Identifiers
URN: urn:nbn:se:uu:diva-265629DOI: 10.1016/j.solener.2015.06.021ISI: 000361583300002OAI: oai:DiVA.org:uu-265629DiVA: diva2:866980
Available from: 2015-11-04 Created: 2015-11-02 Last updated: 2017-12-01Bibliographically approved

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Zhao, Shuxi

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