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Influence of the Cu2ZnSnS4 absorberthickness on thin film solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2015 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 212, no 12, 2889-2896 p.Article in journal (Refereed) Published
Abstract [en]

In this study, we investigate the influence of absorber thickness on Cu2ZnSnS4 (CZTS) solar cells, ranging from 500 to 2000 nm, with nearly constant metallic composition. Despite the observed ZnS and SnS phases on the surface and backside of all absorber films, scanning electron microscopy, Raman scattering, and X-ray diffraction show no large variations in material quality for the different thicknesses. The open-circuit voltage (V-oc), short-circuit current and overall power conversion efficiency of the fabricated devices show an initial improvement as the absorber thickness increases but saturate when the thickness exceeds 750 nm. External quantum efficiency (EQE) measurements suggest that the current is mainly limited by collection losses. This can result from non-optimal bulk quality of the CZTS absorber (including the presence of secondary phases), which is apparently further reduced for the thinnest devices. The observed saturation of V-oc agrees with the expected influence from strong interface recombination. Finally, an effective collection depth of 750-1000 nm for the minority carriers generated in the absorber can be estimated from EQE, indicating that the proper absorber thickness for our device process is approximately 1000 nm. Performance could be improved for thicker films, if the collection depth can be increased.

Place, publisher, year, edition, pages
2015. Vol. 212, no 12, 2889-2896 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-268543DOI: 10.1002/pssa.201532311ISI: 000366589900034OAI: oai:DiVA.org:uu-268543DiVA: diva2:877523
Funder
EU, FP7, Seventh Framework Programme, 316488Knut and Alice Wallenberg FoundationSwedish Foundation for Strategic Research
Available from: 2015-12-07 Created: 2015-12-07 Last updated: 2017-12-01

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Ren, YiScragg, JonathanFrisk, ChristopherLarsen, JesLi, ShuyiPlatzer-Björkman, Charlotte

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