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Investigating the electronic properties of Al2O3/Cu(In, Ga)Se-2 interface
Catholic Univ Louvain, ICTEAM, B-1348 Louvain La Neuve, Belgium..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Univ Louvain, ESAT KU Leuven, B-3001 Louvain, Belgium.;IMEC, B-3001 Louvain, Belgium..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Catholic Univ Louvain, ICTEAM, B-1348 Louvain La Neuve, Belgium..
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2015 (English)In: AIP Advances, ISSN 2158-3226, E-ISSN 2158-3226, Vol. 5, no 10, 107101Article in journal (Refereed) Published
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Abstract [en]

Atomic layer deposited (ALD) Al2O3 films on Cu(In, Ga)Se-2 (CIGS) surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for the first time, experimentally extracted electronic parameters, i.e. fixed charge density (Q(f)) and interface-trap charge density (D-it), for as-deposited (AD) and post-deposition annealed (PDA) ALD Al2O3 films on CIGS surfaces using capacitance-voltage (C-V) and conductance-frequency (G-f) measurements. These results indicate that the AD films exhibit positive fixed charges Q(f) (approximately 10(12) cm(-2)), whereas the PDA films exhibit a very high density of negative fixed charges Q(f) (approximately 10(13) cm(-2)). The extracted D-it values, which reflect the extent of chemical passivation, were found to be in a similar range of order (approximately 10(12) cm(-2) eV(-1)) for both AD and PDA samples. The high density of negative Q(f) in the bulk of the PDA Al2O3 film exerts a strong Coulomb repulsive force on the underlying CIGS minority carriers (n(s)), preventing them to recombine at the CIGS/Al2O3 interface. Using experimentally extracted Q(f) and D-it values, SCAPS simulation results showed that the surface concentration of minority carriers (n(s)) in the PDA films was approximately eight-orders of magnitude lower than in the AD films. The electrical characterization and estimations presented in this letter construct a comprehensive picture of the interfacial physics involved at the Al2O3/CIGS interface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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2015. Vol. 5, no 10, 107101
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Materials Engineering Other Physics Topics
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URN: urn:nbn:se:uu:diva-269263DOI: 10.1063/1.4932512ISI: 000364228800001OAI: oai:DiVA.org:uu-269263DiVA: diva2:882717
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Swedish Research CouncilSwedish Energy Agency
Available from: 2015-12-15 Created: 2015-12-15 Last updated: 2017-12-01Bibliographically approved

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Vermang, BartEdoff, Marika

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