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Planar Hall-Effect Bridge Sensor With NiFeX (X = Cu, Ag, and Au) Sensing Layer
NanOsc AB, S-16440 Kista, Sweden.;KTH Royal Inst Technol, Sch Informat & Commun Technol, Dept Mat & Nano Phys, S-16440 Kista, Sweden..
NanOsc AB, S-16440 Kista, Sweden.;KTH Royal Inst Technol, Sch Informat & Commun Technol, Dept Mat & Nano Phys, S-16440 Kista, Sweden..
KTH Royal Inst Technol, Sch Informat & Commun Technol, Dept Mat & Nano Phys, S-16440 Kista, Sweden..
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
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2015 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 51, no 11, 4005404Article in journal, Meeting abstract (Refereed) Published
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Text
Abstract [en]

This paper presents a new material alloy for planar Hall-effect bridge (PHEB) sensors and the accurate analysis of the resistance and sensitivity of these materials. The sensing layer is based on NiFeX (X = Cu, Ag, and Au). These alloys have a lower resistance without a significant loss of sensitivity. The presented PHEB sensors with NiFeX sensing layer show a coercivity of 1.7 Oe, lower than that of PHEB sensors with NiFe sensing layers, which have coercivities of 2.2 Oe.

Place, publisher, year, edition, pages
2015. Vol. 51, no 11, 4005404
Keyword [en]
Anisotropic magnetoresistance (AMR), antiferromagnetic (AFM), ferromagnetic (FM), magnetic anisotropy, magnetic sensor planar Hall effect
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-269979DOI: 10.1109/TMAG.2015.2451216ISI: 000364770500327OAI: oai:DiVA.org:uu-269979DiVA: diva2:885594
Conference
IEEE International Magnetics Conference (Intermag), MAY 11-15, 2015, Beijing, PEOPLES R CHINA
Note

Also published with another Web of Science ID: 000381606000071

Available from: 2015-12-19 Created: 2015-12-19 Last updated: 2017-12-01Bibliographically approved

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Persson, Anders

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