uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effect of Sulphur and Phosphorous Doping on the Growth Rate of CVD Diamond (111)
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström.
(English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731Article in journal (Refereed) Submitted
Abstract [en]

The purpose with the present study has been to theoretically investigate the effect of P (or S) doping on the diamond growth rate. The highly symmetric diamond (111) surface, terminated by H atoms, was thereby carefully investigated using density functional theory calculations under periodic boundary conditions. It was shown that both the thermodynamic and kinetic aspects of P (or S) doping during diamond growth will be severely affected by the dopants (as compared with the non-doped situations). More specifically, the results showed that P (positioned within the 2nd, 3rd or 4th layer), will cause an enhancement in the growth rate. On the other hand, any growth rate improvement do only occur when positioning S in the 4th atomic C layer. With S in atomic layers 1, 2 and 3, the growth rates were observed to decrease. These observations did correlate with experimental results.

Keyword [en]
Growth rate, CVD, Ab initio theory, P doping, S doping
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-271511OAI: oai:DiVA.org:uu-271511DiVA: diva2:892043
Available from: 2016-01-08 Created: 2016-01-08 Last updated: 2017-12-01
In thesis
1. The Effect of Various Dopants on Diamond Growth: A Combined Experimental & Theoretical Approach
Open this publication in new window or tab >>The Effect of Various Dopants on Diamond Growth: A Combined Experimental & Theoretical Approach
2016 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Diamond is a unique material with many exceptional properties. It has therefore been proven to be an important material for many applications. Moreover, the introduction of dopant species into the gas phase during the CVD growth process has been shown to strongly influence not only the properties and morphology of diamond, but also the growth rate. The purpose with the theoretical part of the present study has been to support and explain the experimental observations regarding the effect of various dopants (nitrogen, phosphorous, sulphur, and boron) on the diamond growth rate. Commonly observed H-terminated diamond surfaces [(111), (110) and (100)-2×1], were thereby carefully investigated using density functional theory under periodic boundary conditions. Based on the assumption that the hydrogen abstraction reaction is the growth rate-limiting step, both the thermodynamic and kinetic aspects of the diamond growth process were found to be severely affected by various dopants. More specifically, the results showed that nitrogen and phosphorous dopants (positioned within the 2nd, 3rd or 4th carbon layer) will cause an enhancement in the growth rate (as compared with non-doped situations). On the other hand, any growth rate improvement does only occur when positioning boron in the 2nd, and sulphur in the 4th, atomic carbon layer. With boron, and sulphur, positioned within the other atomic carbon layers, the growth rates were observed to decrease. In addition, the main purpose with the experimental part of the present study has been to investigate the effect of one specific dopant precursor (TMB) on the boron-doped diamond growth process. The result has shown that the increasing mass flow of TMB will not affect the mechanism of the HFCVD growth process of boron doped diamond. However, a linear boron carrier concentration in the diamond film vs. mass flow rate of TMB was observed. 

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2016. 71 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1333
Keyword
Diamond, Growth rate, HFCVD, Doping, Activation energy, Reaction order
National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-271491 (URN)978-91-554-9447-6 (ISBN)
Public defence
2016-02-29, Polhemsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (English)
Opponent
Supervisors
Funder
Swedish Research Council
Available from: 2016-02-04 Created: 2016-01-08 Last updated: 2016-02-12

Open Access in DiVA

No full text

By organisation
Department of Chemistry - ÅngströmDepartment of Engineering Sciences
In the same journal
Thin Solid Films
Inorganic Chemistry

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 1593 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf