Kinetic Study on the Growth of HFCVD B-doped Diamond
(English)Manuscript (preprint) (Other academic)
The purpose with the present study has been to investigate the effect of trimethylborate on the diamond growth kinetics as a function of the boron carrier concentration in that diamond film. The kinetics of diamond hot filament CVD as a function of different gas compositions and various substrate temperatures were carefully studied. It was shown that the boron carrier concentration depended mainly on the boron concentration in the gas phase, but it is also various relative to the growth mechanism changes from surface kinetic to mass transport. However, trimethylborate did not alter the kinetics or HFCVD diamond growth mechanism at a measurable level. Moreover, Raman spectroscopy revealed that trimethylborate affected the quality of B-doped diamond films.
Boron doped diamond, HFCVD, Trimethylborate, Chemical kinetic, Boron carrier concentration
IdentifiersURN: urn:nbn:se:uu:diva-271513OAI: oai:DiVA.org:uu-271513DiVA: diva2:892046