Rear Surface Optimization of CZTS Solar Cells by Use of a Passivation Layer With Nanosized Point Openings
2016 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 6, no 1, 332-336 p.Article in journal (Refereed) PublishedText
Previously, an innovative way to reduce rear interface recombination in Cu(In, Ga)(S, Se)(2) (CIGSSe) solar cells has been successfully developed. In this work, this concept is established in Cu-2(Zn, Sn)(S, Se)(4) (CZTSSe) cells to demonstrate its potential for other thin-film technologies. Therefore, ultrathin CZTS cells with an Al2O3 rear surface passivation layer having nanosized point openings are fabricated. The results indicate that introducing such a passivation layer can have a positive impact on open-circuit voltage (V-OC; +17% rel.), short-circuit current (J(SC); +5% rel.), and fill factor (FF; +9% rel.), compared with corresponding unpassivated cells. Hence, a promising efficiency improvement of 32% rel. is obtained for the rear passivated cells.
Place, publisher, year, edition, pages
2016. Vol. 6, no 1, 332-336 p.
Aluminum oxide, Cu(In, Ga)(S, Se)(2), Cu-2(Zn, Sn)(S, Se)(4), nanosized point contacts, solar cells, surface passivation layer, thin-film
IdentifiersURN: urn:nbn:se:uu:diva-274909DOI: 10.1109/JPHOTOV.2015.2496864ISI: 000367251900048OAI: oai:DiVA.org:uu-274909DiVA: diva2:898268
FunderSwedish Research CouncilSwedish Energy AgencyEU, FP7, Seventh Framework Programme, 300998EU, FP7, Seventh Framework Programme, 327367