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Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA. (Thin film solar cells)
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2016 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 34, no 2, 021516Article in journal (Refereed) Published
Abstract [en]

A broad and expanding range of materials can be produced by atomic layer deposition at relatively low temperatures, including both oxides and metals. For many applications of interest, however, it is desirable to grow more tailored and complex materials such as semiconductors with a certain doping, mixed oxides, and metallic alloys. How well such mixed materials can be accomplished with ALD requires knowledge of the conditions under which the resulting films will be mixed, solid solutions, or laminated. The growth and lamination of zinc oxide and tin oxide is studied here by means of the extremely surface sensitive technique of low energy ion scattering, combined with bulk composition and thickness determination, and X-ray diffraction. At the low temperatures used for deposition (150 °C) there is little evidence for atomic scale mixing even with the smallest possible bilayer period, and instead a morphology with small ZnO inclusions in a SnOx matrix is deduced. Post-annealing of such laminates above 400 °C however produces a stable surface phase with a 30% increased density. From the surface stoichiometry, this is likely the inverted spinel of zinc stannate, Zn2SnO4. Annealing to 800 °C results in films containing crystalline Zn2SnO4, or multilayered films of crystalline ZnO, Zn2SnO4 and SnO2 phases, depending on the bilayer period.

Place, publisher, year, edition, pages
2016. Vol. 34, no 2, 021516
Keyword [en]
zinc compounds, X-ray diffraction, semiconductor growth, surface segregation, ion-surface impact, atomic layer deposition, wide band gap semiconductors, laminates, tin compounds, nanofabrication, nanocomposites, annealing
National Category
Materials Engineering Nano Technology
Research subject
Engineering Science with specialization in Electronics; Engineering Science with specialization in Materials Science
URN: urn:nbn:se:uu:diva-281226DOI: 10.1116/1.4941411ISI: 000372352300038OAI: oai:DiVA.org:uu-281226DiVA: diva2:913340
Marcus and Amalia Wallenberg Foundation
Available from: 2016-03-21 Created: 2016-03-21 Last updated: 2016-08-30Bibliographically approved

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The full text will be freely available from 2017-02-08 11:35
Available from 2017-02-08 11:35

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Publisher's full texthttp://scitation.aip.org/content/avs/journal/jvsta/34/2/10.1116/1.4941411

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Hägglund, Carl
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Solid State Electronics
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