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Zero and negative energy dissipation at information-theoretic erasure
Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA..
Osaka Univ, NICT, CiNet, 1-4 Yamadaoka, Suita, Osaka 5650871, Japan..
2016 (English)In: Journal of Computational Electronics, ISSN 1569-8025, E-ISSN 1572-8137, Vol. 15, no 1, 335-339 p.Article in journal (Refereed) Published
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Abstract [en]

We introduce information-theoretic erasure based on Shannon's binary channel formula. It is pointed out that this type of erasure is a natural energy-dissipation-free way in which information is lost in double-potential-well memories, and it may be the reason why the brain can forget things effortlessly. We also demonstrate a new non-volatile, charge-based memory scheme wherein the erasure can be associated with even negative energy dissipation; this implies that the memory's environment is cooled during information erasure and contradicts Landauer's principle of erasure dissipation. On the other hand, writing new information into the memory always requires positive energy dissipation in our schemes. Finally, we show a simple system where even a classical erasure process yields negative energy dissipation of arbitrarily large energy.

Place, publisher, year, edition, pages
2016. Vol. 15, no 1, 335-339 p.
Keyword [en]
Erasure, Zero energy dissipation, Negative energy dissipation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-282470DOI: 10.1007/s10825-015-0754-5ISI: 000371402300038OAI: oai:DiVA.org:uu-282470DiVA: diva2:917169
Available from: 2016-04-05 Created: 2016-04-05 Last updated: 2017-11-30Bibliographically approved

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Granqvist, Claes-Göran

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