Electrical and Plasmonic Properties of Ligand-Free Sn4+-Doped In2O3 (ITO) Nanocrystals
2016 (English)In: ChemPhysChem, ISSN 1439-4235, E-ISSN 1439-7641, Vol. 17, no 5, 710-716 p.Article in journal (Refereed) PublishedText
Sn4+-doped In2O3 (ITO) is a benchmark transparent conducting oxide material. We prepared ligand-free but colloidal ITO (8nm, 10% Sn4+) nanocrystals (NCs) by using a post-synthesis surface-modification reaction. (CH3)(3)OBF4 removes the native oleylamine ligand from NC surfaces to give ligand-free, positively charged NCs that form a colloidal dispersion in polar solvents. Both oleylamine-capped and ligand-free ITO NCs exhibit intense absorption peaks, due to localized surface plasmon resonance (LSPR) at around =1950nm. Compared with oleylamine-capped NCs, the electrical resistivity of ligand-free ITO NCs is lower by an order of magnitude (approximate to 35mcm(-1)). Resistivity over a wide range of temperatures can be consistently described as a composite of metallic ITO grains embedded in an insulating matrix by using a simple equivalent circuit, which provides an insight into the conduction mechanism in these systems.
Place, publisher, year, edition, pages
2016. Vol. 17, no 5, 710-716 p.
conducting materials, doping, ITO nanocrystals, surface modification, surface plasmon resonance
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:uu:diva-283775DOI: 10.1002/cphc.201500973ISI: 000372190900017PubMedID: 26710967OAI: oai:DiVA.org:uu-283775DiVA: diva2:919636