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Electrical and Plasmonic Properties of Ligand-Free Sn4+-Doped In2O3 (ITO) Nanocrystals
IISER, Dept Chem, Pune 411008, Maharashtra, India..
Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India..
IISER, Dept Chem, Pune 411008, Maharashtra, India..
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and condensed matter physics. Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India.;CSIR NISE, New Delhi 110001, India..
2016 (English)In: ChemPhysChem, ISSN 1439-4235, E-ISSN 1439-7641, Vol. 17, no 5, 710-716 p.Article in journal (Refereed) Published
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Abstract [en]

Sn4+-doped In2O3 (ITO) is a benchmark transparent conducting oxide material. We prepared ligand-free but colloidal ITO (8nm, 10% Sn4+) nanocrystals (NCs) by using a post-synthesis surface-modification reaction. (CH3)(3)OBF4 removes the native oleylamine ligand from NC surfaces to give ligand-free, positively charged NCs that form a colloidal dispersion in polar solvents. Both oleylamine-capped and ligand-free ITO NCs exhibit intense absorption peaks, due to localized surface plasmon resonance (LSPR) at around =1950nm. Compared with oleylamine-capped NCs, the electrical resistivity of ligand-free ITO NCs is lower by an order of magnitude (approximate to 35mcm(-1)). Resistivity over a wide range of temperatures can be consistently described as a composite of metallic ITO grains embedded in an insulating matrix by using a simple equivalent circuit, which provides an insight into the conduction mechanism in these systems.

Place, publisher, year, edition, pages
2016. Vol. 17, no 5, 710-716 p.
Keyword [en]
conducting materials, doping, ITO nanocrystals, surface modification, surface plasmon resonance
National Category
Atom and Molecular Physics and Optics
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URN: urn:nbn:se:uu:diva-283775DOI: 10.1002/cphc.201500973ISI: 000372190900017PubMedID: 26710967OAI: oai:DiVA.org:uu-283775DiVA: diva2:919636
Available from: 2016-04-14 Created: 2016-04-14 Last updated: 2017-11-30Bibliographically approved

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Sarma, Dipankar Das

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