Rear surface optimization of CZTS solar cells by use of a passivation layer with nano-sized point openings
2015 (English)In: 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015Conference paper (Refereed)Text
Previously, an innovative way to reduce rear interface recombination of Cu(In,Ga)(S,Se)(2) (CIGSSe) solar cells has been successfully developed. In this work, this concept is established in Cu-2(Zn,Sn)(S,Se)(4) (CZTSSe) cells, to demonstrate its potential for other thin-film technologies. Therefore, ultra-thin CZTS cells with an Al2O3 rear surface passivation layer having nano-sized point openings are fabricated. The results indicate that introducing such a passivation layer can have a positive impact on open circuit voltage (V-OC; +49%(rel.)) or short circuit current (J(SC); +17%(rel.)), compared to corresponding unpassivated cells. Hence, a promising efficiency improvement of 52%(rel.) is obtained for the rear passivated cells.
Place, publisher, year, edition, pages
, IEEE Photovoltaic Specialists Conference, ISSN 0160-8371
solar cells, thin-film, Cu(In, Ga)(S, Se)(2), Cu-2(Zn, Sn)(S, Se)(4), surface passivation layer, nano-sized point contacts, aluminum oxide
IdentifiersURN: urn:nbn:se:uu:diva-284905ISI: 000369992900034ISBN: 978-1-4799-7944-8OAI: oai:DiVA.org:uu-284905DiVA: diva2:920985
IEEE 42nd Photovoltaic Specialist Conference (PVSC), JUN 14-19, 2015, New Orleans, LA