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Analysis of Nanostructure and interface in vacuum annealed Si rich SiC by 4D electron tomography
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
(Photovoltaic Materials and Devices, Delft Univeristy of Technology, P.O. Box 5031, 2600 GA Delft, The Netherlands)
(Photovoltaic Materials and Devices, Delft Univeristy of Technology, P.O. Box 5031, 2600 GA Delft, The Netherlands)
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy.
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2015 (English)Conference paper, Oral presentation with published abstract (Refereed)
Place, publisher, year, edition, pages
2015.
Keyword [en]
Electron tomography
National Category
Natural Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-285834OAI: oai:DiVA.org:uu-285834DiVA: diva2:921200
Conference
2nd International Workshop on TEM Spectroscopy in the Materials Sciences Uppsala, Sweden
Available from: 2016-04-19 Created: 2016-04-19 Last updated: 2016-04-26

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Xie, LingLeifer, Klaus

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